METHOD OF FABRICATING METAL-INSULATOR-METAL CAPACITOR

A method for fabricating an MIM capacitor is provided to completely a photoresist layer without generating subsequent ashing residue, by simultaneously forming a trench and a via hole for forming an MIM capacitor, by forming a dielectric layer on the resultant structure and by forming a photoresist layer with a very small thickness enough for removing only the dielectric layer. First and second metal layer patterns(241,251,242,252) are formed on an insulation layer on a semiconductor substrate(200). An intermetal dielectric is formed on the resultant structure. The intermetal dielectric is etched by a predetermined thickness so that a predetermined thickness of the intermetal dielectric is left on the first metal layer pattern. A first photoresist layer pattern is formed which exposes the etched portion of the intermetal dielectric and a via hole formation part. The exposed portion of the interlayer dielectric is etched by using the first photoresist layer pattern as an etch mask to form a trench exposing the first metal layer pattern and a via hole exposing the second metal layer pattern. A dielectric layer is formed on the resultant structure. A second photoresist layer pattern is formed on the dielectric layer, exposing the dielectric layer in the via hole. The exposed dielectric layer in the via hole is eliminated by using the second photoresist layer pattern as an etch mask to expose the second metal layer pattern.