METHOD FOR MANUFACTURING MOS TRANSISTOR OF SEMICONDUCTOR DEVICE
A method for manufacturing a MOS transistor in a semiconductor device is provided to simplify the manufacturing process and to reduce the manufacturing cost by controlling impurity concentration of a well of a high-voltage MOS transistor. A first well(104) and a second well are formed at a first reg...
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Format: | Patent |
Sprache: | eng |
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Zusammenfassung: | A method for manufacturing a MOS transistor in a semiconductor device is provided to simplify the manufacturing process and to reduce the manufacturing cost by controlling impurity concentration of a well of a high-voltage MOS transistor. A first well(104) and a second well are formed at a first region(A) and a second region(B) of a substrate(100), respectively. A gate oxide layer(108) and a gate electrode(110) are sequentially formed on the resultant structure. A first LDD(Lightly Doped Drain) region(114) is formed in the substrate by using a first photoresist pattern for opening the first region. A second LDD region(118) is formed in the substrate by using a second photoresist pattern for opening the second region. A compensated second well(120) is then formed by performing dopant compensation ion implantation processing for controlling the well concentration of the second region. |
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