METHOD FOR DECHUCKING SUBSTRATE FROM ESC

A substrate dechucking method is provided to restrain the damage of a substrate by measuring exactly a substrate dechucked point. A DC(Direct Current) power source applied to an electrode of an electrostatic chuck is stopped, wherein the electrostatic chuck is used for loading a substrate(S230). A p...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Hauptverfasser:	EOM, YONG TAEK, LEE, JU HEE, KIM, BYONG IL
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	A substrate dechucking method is provided to restrain the damage of a substrate by measuring exactly a substrate dechucked point. A DC(Direct Current) power source applied to an electrode of an electrostatic chuck is stopped, wherein the electrostatic chuck is used for loading a substrate(S230). A pressure value of inert gas at a predetermined portion between the electrostatic chuck and the substrate is reset to a preliminary value, the inert gas is continuously supplied to the predetermined portion, and the pressure of the inert gas is measured(S240). When the pressure of the inert gas is decreased under a reference value, the supply of the inert gas is stopped(S250). Then, the substrate is unloaded from the electrostatic chuck(S260).