MANUFACTURING METHOD OF VERTICAL BIPOLAR JUNCTION TRANSISTOR WHICH HAS DEEP N-WELL IN TRIPPLE-WELL COMPLEMENTARY METAL OXIDE SEMICONDUCTOR TECHNOLOGY AND ITS RECEIVER

Bibliographische Detailangaben

Hauptverfasser:	LEE, KWY RO, KIM, YOUNG JIN, NAM, IL KU
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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