METHOD FOR FORMING ISOLATION LAYER OF SEMICONDUCTOR DEVICE

PURPOSE: A method for forming an isolation layer of a semiconductor device is provided to improve gap-fill property by improving topology between a field and active region. CONSTITUTION: A pad oxide layer, a pad nitride layer and a polysilicon layer are sequentially stacked on a semiconductor substr...

Ausführliche Beschreibung

Bibliographische Detailangaben

1. Verfasser:	PI, SEUNG HO
Format:	Patent
Sprache:	eng ; kor
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
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