VOLTAGE GENERATION CIRCUIT OF SEMICONDUCTOR MEMORY DEVICE

PURPOSE: A voltage generation circuit of a semiconductor device is provided to be capable of improving reliability by restraining generation of a leakage current. CONSTITUTION: A voltage generation circuit comprises a charge pump circuit(1) for pumping an applied voltage, a voltage divide circuit(2)...

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Bibliographische Detailangaben
Hauptverfasser:	JUNG, CHAE HYEON, YANG, TAE HEUM
Format:	Patent
Sprache:	eng ; kor
Schlagworte:	APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC,OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWERSUPPLY SYSTEMS BASIC ELECTRIC ELEMENTS CONTROL OR REGULATION THEREOF CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUTPOWER CONVERSION OR DISTRIBUTION OF ELECTRIC POWER ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY GENERATION SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	PURPOSE: A voltage generation circuit of a semiconductor device is provided to be capable of improving reliability by restraining generation of a leakage current. CONSTITUTION: A voltage generation circuit comprises a charge pump circuit(1) for pumping an applied voltage, a voltage divide circuit(2), and a differential amplifier(3) for controlling the charge pump circuit by comparing a distributed voltage with a reference voltage. The voltage divide circuit(2) further includes a plurality of capacitors(C0-C11) and switches(S1-S10). The first capacitor(C0) is connected to the output node of the charge pump circuit(1) and the second capacitor(C1) is connected with a ground. The distributed voltage can be controlled by the number of capacitor.