TRENCH MANUFACTURING METHOD FOR ISOLATION SEMICONDUCTOR DEVICE

PURPOSE: A trench isolation method is provided to reduce manufacturing costs, to improve efficiency and throughput by using a liner oxide instead of a nitride layer and a pad oxide. CONSTITUTION: A photoresist is deposited directly on a silicon wafer without forming a pad oxide and a nitride layer,...

Ausführliche Beschreibung

Bibliographische Detailangaben

1. Verfasser:	MYUNG, JUNG HAK
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!