박막트랜지스터의제조방법

PURPOSE: A method of manufacturing thin film transistor is provided to successfully form the crystallization of silicon layer by overlapping the photo-defect part with laser after the amorphous silicon layer is grown. CONSTITUTION: Substrate, gate electrode, insulation layer, and amorphous silicon l...

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Bibliographische Detailangaben
1. Verfasser:	CHOI, GI SEONG
Format:	Patent
Sprache:	kor
Schlagworte:	BASIC ELECTRIC ELEMENTS DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FREQUENCY-CHANGING NON-LINEAR OPTICS OPTICAL ANALOGUE/DIGITAL CONVERTERS OPTICAL LOGIC ELEMENTS OPTICS PHYSICS SEMICONDUCTOR DEVICES TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF
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Beschreibung
Zusammenfassung:	PURPOSE: A method of manufacturing thin film transistor is provided to successfully form the crystallization of silicon layer by overlapping the photo-defect part with laser after the amorphous silicon layer is grown. CONSTITUTION: Substrate, gate electrode, insulation layer, and amorphous silicon layer(24) are successively formed. On the surface of the amorphous silicon layer(24), the laser beam is directly sputtered using a cylindrical lens to re-crystallize the amorphous silicon. Formation of the seed of the crystalline is conducted on a gate electrode. The laser beam(y) is sputtered in the way to overlap the photo-defect area(x). 본 발명은 액정표시 소자용 박막 트랜지스터의 제조 방법과 관련된 것으로서, 종래에는 이러한 박막 트랜지스터의 제조 공정이 복잡하고 레이저 빔에 의한 선택적 결정화 수단을 이용하기 때문에 광결함부분의 존재로 전계 효과 이동도가 낮아지는 등의 불리한 문제점이 많았으나, 본 발명은 박막 트랜지스터 제조시 비정질 실리콘층 성장이후 레이저 처리를 광결함 부분을 오버랩하여 처리하는 방법으로 게이트 금속부의 실리콘층 결정화를 양호히 이룰 수 있는 박막 트랜지스터의 제조법을 제공하는데 있다.