SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

PURPOSE: A semiconductor device and a method for manufacturing the same are provided to minimize leakage current by increasing a length of circumference of isolation. CONSTITUTION: A semiconductor device comprises a semiconductor substrate(21), an isolation layer(28a), a gate electrode(29), and a source/drain region. The isolation layer(28a) has a trapezoid shape. The isolation layer(28a) is formed within a trench. The gate electrode(29) is formed on an active region of the semiconductor substrate(21). The source/drain region is formed on the substrate(21) of both sides of the gate electrode(29). The isolation layer(28a) comprises an insulating layer for isolating devices and a sidewall formed at both sides of the insulating layer.