PROCESS FOR DEPOSITING AN OPTICAL TRANSPARENT AND ELECTRICAL CONDUCTIVE ON A SUBSTRATE OF TRANSPARENT MATERIAL

PROCESS FOR DEPOSITING AN OPTICAL TRANSPARENT AND ELECTRICAL CONDUCTIVE ON A SUBSTRATE OF TRANSPARENT MATERIAL

The method concerns deposition of an optically transparent and electrically conductive layer (2), a so-called low-e layer on a substrate (1) made of a transparent material, by means of cathodic sputtering in a high-vacuum chamber (15, 15a). Zinc or doped zinc is used as target material. Two sputter...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: JOACHIM, SZCZYRBOWSKI, ANTON, ZMELTY
Format: Patent
Sprache:eng
Schlagworte:
CHEMICAL SURFACE TREATMENT
CHEMISTRY
COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
COATING MATERIAL WITH METALLIC MATERIAL
COATING METALLIC MATERIAL
DIFFUSION TREATMENT OF METALLIC MATERIAL
INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL
METALLURGY
SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:The method concerns deposition of an optically transparent and electrically conductive layer (2), a so-called low-e layer on a substrate (1) made of a transparent material, by means of cathodic sputtering in a high-vacuum chamber (15, 15a). Zinc or doped zinc is used as target material. Two sputter cathodes (5, 5a) driven by alternating current are located at the same level, and are positioned at the same distance from the substrate. An inlet (24) is foreseen for entry of two process gases: one inert and the other reactive. The proportion of the reactive gas and the electric power density are chosen so that sputtering of the two targets (3, 3a) takes place in a metal mode or within a range between metal and oxide modes. The method is characterised by the fact that the process gases are argon and oxygen.