FABRICATION METHOD OF INTEGRATED CIRCUIT

FABRICATION METHOD OF INTEGRATED CIRCUIT

유전체층을 통해 전기적 구성 요소들을 접속하는 하나이상의 안티퓨즈를 갖는 집적회로 안티퓨즈는 유전체가 침전되기전에 형성되어 안티퓨즈를 노출시키는 윈도우를 형성하기 위해 패턴화된다. An integrated circuit having one or more antifuses which connect electrical components through a dielectric layer. The antifuse is formed before the thick dielectric is deposited and patterned to for...

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Bibliographische Detailangaben
1. Verfasser: STEVEN A. LYTLE
Format: Patent
Sprache:eng ; kor
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:유전체층을 통해 전기적 구성 요소들을 접속하는 하나이상의 안티퓨즈를 갖는 집적회로 안티퓨즈는 유전체가 침전되기전에 형성되어 안티퓨즈를 노출시키는 윈도우를 형성하기 위해 패턴화된다. An integrated circuit having one or more antifuses which connect electrical components through a dielectric layer. The antifuse is formed before the thick dielectric is deposited and patterned to form windows which expose the antifuse.