ALUMINUM BASED MATALLIZATION FOR SEMICONDUCTOR DEVICE

ALUMINUM BASED MATALLIZATION FOR SEMICONDUCTOR DEVICE

A semiconductor device includes a wiring line formed from an electrode wiring layer (3) which uses, as an electrode material, an A l alloy containing Cu, wherein a wiring line (3-1) having a size smaller than a crystal grain size has a Cu concentration of 0.05 to 0.3 wt%, and a wiring line (3-2) hav...

Ausführliche Beschreibung

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Bibliographische Detailangaben
1. Verfasser: EGAWA, HIDEMITSU
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A semiconductor device includes a wiring line formed from an electrode wiring layer (3) which uses, as an electrode material, an A l alloy containing Cu, wherein a wiring line (3-1) having a size smaller than a crystal grain size has a Cu concentration of 0.05 to 0.3 wt%, and a wiring line (3-2) having a size larger than a crystal grain size has a Cu concentration of 0.5 to 10 wt%.