METHOD AND DEVICE FOR MEASURING SEMICONDUCTOR SURFACE

PURPOSE:To obtain charge distribution in an insulating film on a semiconductor surface without step-etching by forming an electrode capable of varying an air gap with the semiconductor surface. CONSTITUTION:An silicon oxide film 2 is formed onto silicon 1, the wafer is installed onto a sample base,...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Hauptverfasser:	MUNAKATA TADASUKE, TSUJII KANJI, MIZUTANI TATSUMI, HARUTA AKIRA, HOSOKI SHIGEYUKI, NISHIMATSU SHIGERU
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES MEASURING MEASURING ELECTRIC VARIABLES MEASURING MAGNETIC VARIABLES PHYSICS SEMICONDUCTOR DEVICES TESTING
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	PURPOSE:To obtain charge distribution in an insulating film on a semiconductor surface without step-etching by forming an electrode capable of varying an air gap with the semiconductor surface. CONSTITUTION:An silicon oxide film 2 is formed onto silicon 1, the wafer is installed onto a sample base, and an air gap in an electrode 3 is brought to 0.5mum or less by a movable mechanism 4. A distance from a semiconductor surface can be acquired by measuring capacitance in the air-gap electrode, there are charges in a delta-function manner on the interface with a semiconductor and an outermost surface in an electric field in SiO2, and each charge can be obtained by altering the gap of the air-gap electrode and conducting C-V measurement at three points when the uniform distribution of charges in the film is assumed.