SEMICONDUCTOR STORAGE DEVICE

PURPOSE:To improve the read-out of data in speed and the write of data in property by a method wherein the write of data is executed in such a manner that a second semiconductor region connected with a ground wire, a first semiconductor region connected with a data wire, and a control gate electrode are supplied with a high, a low, and a high potential respectively, and the read-out of data is performed in such a manner as a control gate electrode is supplied with a required potential as the first and the second semiconductor region are made to serve as a source and a drain respectively. CONSTITUTION:The write of data is executed by applying a high potential to a second semiconductor region (n layers 9, 10) connected with a ground wire SL and a control gate 7, and a low potential to a first semiconductor region (n layer 12) connected with a data line DL. The read-out of data is performed in such a manner that a control gate 7 is supplied with 5V, for example, as the first semiconductor region (n layer 12) and the second semiconductor region (n layers 9, 10) connected with the ground wire SL are made to serve as a source and a drain respectively. By these processes, the electric field is made to be intensified at the end of the ground line on the channel side during the write of data, so that a write property can be improved. And, a junction capacitance between an n-type semiconductor region 12 and a substrate 1 is made to decrease during the read-out of data is performed, consequently the read-out can be improved in speed.