FORMATION OF MULTILAYER INTERCONNECTION

PURPOSE:To form excellent multilayer interconnection without breaking down the second interconnection layer by forming sidewall layers on the sidewalls of the first interconnection layers. CONSTITUTION:A silicon oxide film 6 is bonded on overall surface including the first interconnection layers 5. First, overall surface is anisotropically etched away to form sidewall layers 7 on the sidewalls of the first interconnection layers 5. Second, another silicon oxide film 8 is bonded on the overall surfaces by plasma CVD process and then a SOG layer 9 is bonded on the upper surface by spin-coating process to flatten the upper surface. In such a process, the silicon oxide film 8 is thickly bonded using the taper etching surfaces of the sidewall layers 7 so that the silicon oxide film 8 in sufficient thickness may be bonded on the steps of the first interconnection layers 5. Finally, a part of the silicon oxide film 8 and the SOG layer 9 are anisotropically etched away at the same etching rate while aluminum is sputtered and etched away into specified pattern to form the second interconnection layer 10.