SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND MANUFACTURE THEREOF

PURPOSE:To make a Bi-CMOS higher in integration by a method wherein a channel MISFET of a CMOS is made to be composed of an n-type gate electrode and a p channel MISFET is made to consist of a p-type gate electrode. CONSTITUTION:A Bi-CMOS is provided, where an n-channel MISFETQn of a CMOS is composed of an n-type gate electrode 11A and a p-channel MISFETQp consists of a p-type gate electrode 11B. An impurity introducing amount Qc for controlling a threshold voltage is made to be smaller when the channel MISFETQp is composed of the p-type gate electrode 11B as compared with an n-type gate electrode used for composing the channel MISFETQp. That is, a depletion region, which extends from a semiconductor region 15 or 18 that is a source region or a drain region to a channel forming region side, can be made to be smaller. A short channel effect of the p-channel MISFETQp can be prevented by the resuction of the depletion region in extension, and consequently the channel length of the p-channel MISFETQp is made to be reduced so as to decrease it in the occupied area. And thus, the Bi-CMOS can be improved in integration.