LIGHT EMITTING DEVICE OF SEMICONDUCTOR AND MANUFACTURE THEREOF

PURPOSE:To improve transverse optical confinement effect by forming both sides of luminous stripe in an active region of hetero junction. CONSTITUTION:An n-type AlGa1-XAs layer 2 which becomes a first clad layer and a quantum well construction 3 which becomes an active layer is formed on a GaAs substrate 1. Then, an n-type Al2Ga1-ZAs layer 4 which becomes a second clad layer and an n-type GaAs layer 5 which becomes a cap layer are formed. And then, a silicon nitride film 20 is formed only on an area which becomes a luminous stripe, zinc is dissipated at approximately 600 to 900 degrees by the closed pipe method, and a p-type region 16 is formed on both sides of a region which becomes the luminous stripe. Then, the junction between the GaAs layer and the p-type region 16 constituting the quantum well structure 3 is in pn junction and constitutes a hetero-junction. The p-type AlGaAs region 16 has a smaller reflection index than the GaAs layer of quantum well layer so that optical confinement is effectively performed in the quantum well construction 3.