HIGH FREQUENCY/HIGH OUTPUT TRANSISTOR

PURPOSE:To reduce the impedance conversion loss by curtailing a middle part of a tapered impedance conversion part at a connection part from a transistor(TR) chip in a microstrip line into a proper shape. CONSTITUTION:A gate electrode of a TR chip 4 of a high frequency high output TR is connected to...

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Bibliographische Detailangaben
1. Verfasser:	ITO SAKANORI
Format:	Patent
Sprache:	eng
Schlagworte:	AMPLIFIERS BASIC ELECTRIC ELEMENTS BASIC ELECTRONIC CIRCUITRY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE SEMICONDUCTOR DEVICES WAVEGUIDES
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Beschreibung
Zusammenfassung:	PURPOSE:To reduce the impedance conversion loss by curtailing a middle part of a tapered impedance conversion part at a connection part from a transistor(TR) chip in a microstrip line into a proper shape. CONSTITUTION:A gate electrode of a TR chip 4 of a high frequency high output TR is connected to an impedance conversion section 8 of an internal matching circuit 20 for gate, then a microstrip line 5. A drain electrode or the TR chip 4 is connected to a strip line 6 via an impedance conversion section 2 of an internal matching circuit 10 for drain. Moreover, the internal matching circuit board 10 has the microstrip line 6 made of a metallic pattern and a tapered impedance conversion section 2. Then an opening 1 is provided to the middle of the tapered impedance conversion part 2, a difference from the electric length of each path at the tapered impedance conversion part is minimized by the opening 1.