MANUFACTURE OF N-TYPE AND P-TYPE FINE CRYSTALLINE SEMICONDUCTOR ALLOY MATERIAL

MANUFACTURE OF N-TYPE AND P-TYPE FINE CRYSTALLINE SEMICONDUCTOR ALLOY MATERIAL

PURPOSE: To provide an n and p-type fine crystalline semiconductor alloy materials, having wide band gaps and easily deposited by applying a-c glow discharge to a precursor mixture, where a magnetic field sufficiently strong for inducing electron cyclotron resonance does not exist. CONSTITUTION: A p...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: SUTANFUOODO AARU OBUSHINSUKII, SABUHENDOU GUHA
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Zusammenfassung:PURPOSE: To provide an n and p-type fine crystalline semiconductor alloy materials, having wide band gaps and easily deposited by applying a-c glow discharge to a precursor mixture, where a magnetic field sufficiently strong for inducing electron cyclotron resonance does not exist. CONSTITUTION: A p-type fine crystalline semiconductor alloy material, having a wide band gap and bang gap expanding element, is manufactured by the a-c glow discharge deposition method, without using a sufficiently strong magnetic field for inducing the electron cyclotron resonance. The glow discharge deposition of a mixed gas contg. a semiconductor precursor gas, p-dopant precursor gas, band gap expanding precursor gas and dil. gas forms a fine crystalline semiconductor alloy thin film on a substrate. Thus a p-type fine crystalline semiconductor alloy material, having a band gap of 2.0eV or more and conductivity of 1Ω cm or more is deposited.