MANUFACTURE OF SEMICONDUCTOR DEVICE

PURPOSE:To improve characteristics and to realize the fining, by using a selective epitaxial growth technique to make a semiconductor layer grow only inside an opening part formed selectively on an oxidizing film. CONSTITUTION:An epitaxial layer 12 made of N type silicon is made to grow on a substrate 10, and a P type element isolation region 13 is formed to reach the substrate 10. A P type external base region 14 and a P type internal base region 15 are formed inside the epitaxial layer 12, and besides an N type collector contact region 16 is formed. Subsequently a silicon oxidizing film 17 is formed on the whole surface, and contact holes 18 and 19 are formed in the film 17 so as to reach the surfaces of the internal base region 15 and the collector contact region 16 respectively. Next, epitaxial growth is performed by a selective epitaxial growth technique in which a reduced pressure epitaxial growth device is used, so that an N type emitter region 20 and a collector contact region 21 are made to selectively grow only inside both the contact holes 18 and 19.