ELECTRON BEAM DIRECT LITHOGRAPHY APPARATUS

PURPOSE:To obtain the title apparatus, which can perform lithography characterized by high throughput as a whole highly accurately so as to include data processing, based on the pattern data of the output from CAD, by sequentially reading divided and re-edited lithography pattern data, executing the main deflection scanning of an electron beam, and executing specified secondary deflection scanning. CONSTITUTION:The lithography pattern data of the output of CAD along the entire surface of a board 31 is virtually divided into a plurality of board fields, which can undergo the deflection scanning of an electron beam 1 with a means 34. The data are re-edited into the lithography pattern data for every field with the means 34. The lithography pattern data, which are divided and re-edited for every field, are stored in a means 36. Means 38-42 read the stored lithography pattern data and generate a control signal for executing the main deflection scanning of the electron beam 1. A secondary deflection control means 43 generates a control signal for executing the specified secondary deflection scanning, which draws a pattern having a specified width based on the stored lithography pattern data. The secondary deflection scanning is superimposed on said main deflection scanning, and the printed board 31 is scanned with the electron beam 1. Thus the specified pattern is drawn.