POSITIVE TYPE PHOTORESIST COMPOSITION

PURPOSE:To enhance sensitivity without impairing a residual film rate by incorporating at least one of naphthols in the photoresist composition. CONSTITUTION:The photoresist composition of the title contains a novolak resin (A), a quinonediazide compound as a photosensitive agent, and the naphthol (...

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Bibliographische Detailangaben
Hauptverfasser:	NINOMIYA TAKAO, KAMIYA YASUNORI, HANABATAKE MAKOTO, FURUTA AKIHIRO
Format:	Patent
Sprache:	eng
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR AUXILIARY PROCESSES IN PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHIC PROCESSES, e.g. CINE, X-RAY, COLOUR,STEREO-PHOTOGRAPHIC PROCESSES PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHOTOSENSITIVE MATERIALS FOR PHOTOGRAPHIC PURPOSES PHYSICS
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Beschreibung
Zusammenfassung:	PURPOSE:To enhance sensitivity without impairing a residual film rate by incorporating at least one of naphthols in the photoresist composition. CONSTITUTION:The photoresist composition of the title contains a novolak resin (A), a quinonediazide compound as a photosensitive agent, and the naphthol (B), such as alpha- or beta-naphthol, usable alone or in a combination of them. The resin (A) is obtained by additionally condensing cresols with formaldehyde, and its molecular weight distribution is as follows; a fraction of 150-500 amounts to 8-35%, that of 500-5,000 amounts to 0-25%, and that of >=5,000 amounts to 40-92%, and these molecular weights are obtained by the areal ratio of the gel permeation chromatographic pattern and expressed in terms of polystyrene.