METHOD FOR CRUSHING HIGH PURITY SILICON

PURPOSE:To minimize the contamination of silicon product crushing and to prevent the formation of fine powder or particles by crushing heated high purity silicon by rapid cooling caused by contact with a liq. inert cooling medium. CONSTITUTION:Heated high purity silicon is crushed by rapid cooling c...

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Bibliographische Detailangaben
Hauptverfasser: ABE TOSHIHIRO, IWATA KENJI, OKIMOTO KENJI, IKEDA KEIICHI, MIYAGAWA HIROJI
Format: Patent
Sprache:eng
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Zusammenfassung:PURPOSE:To minimize the contamination of silicon product crushing and to prevent the formation of fine powder or particles by crushing heated high purity silicon by rapid cooling caused by contact with a liq. inert cooling medium. CONSTITUTION:Heated high purity silicon is crushed by rapid cooling caused by contact with a liq. inert cooling medium. The heated high purity silicon is preferably in the form of granules or a melt and the pref. heating temp. is 500-1500 deg.C. The liq. inert cooling medium is a liquefied gas, preferably liquefied helium, neon, argon, nitrogen or hydrogen.