SEMICONDUCTOR LIGHT-EMITTING ELEMENT

PURPOSE:To improve optical response by transmitting light at the central section of a light-emitting section through a light-emitting section oppositely faced to a current constriction section and annexing a metal, a semiconductor, a resin, etc., for absorbing light in a peripheral section. CONSTITUTION:An N-Ga0.6Al0.4As clad layer 102, a P-Ga0.94Al0.06As active layer 103, a P-Ga0.6Al0.4As clad layer 104 and a P-Ga0.9Al0.1As ohmic layer 105 are grown onto an N-Ga0.8Al0.2As substrate 101 in succession. An SiO2 film 106 is laminated onto the ohmic layer 105. A current constriction section 108 is prepared through a photolithographic process, and AuZu/Au are laminated as a P ohmic electrode 107 and AuGe/Au as an N ohmic electrode 109. A light- emitting section 110 is prepared where opposite to the current constriction section 108 of the N ohmic electrode 109. When currents are passed through the element, the active region 103 emits light on the basis of the shape of the current constriction section 108, and distribution in which a central section has high current density and a peripheral section low one is shaped. Consequently, light in a light-emitting region section has the high frequency response of light. Accordingly, only light having high optical response in a light-emitting section call be extracted selectively to the outside.