GAS SENSOR AND ITS MANUFACTURE

PURPOSE:To dispense with a doping process, by forming a metal oxide thin film on the surface of an insulating substrate vertically as columnar crystal with the diameter of 0.001-10mum to set the average length of a non-fused part between adjacent columnar crystals over 30% more than the length of th...

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Bibliographische Detailangaben
Hauptverfasser:	YAKUSHIJI SHINGO, IPPONMATSU MASAMICHI, OKADA OSAMU, MATSUMOTO TAKESHI
Format:	Patent
Sprache:	eng
Schlagworte:	INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES MEASURING PHYSICS TESTING
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Beschreibung
Zusammenfassung:	PURPOSE:To dispense with a doping process, by forming a metal oxide thin film on the surface of an insulating substrate vertically as columnar crystal with the diameter of 0.001-10mum to set the average length of a non-fused part between adjacent columnar crystals over 30% more than the length of the columnar crystal. CONSTITUTION:A gas detection is performed by utilizing changes in the impedance of a metal oxide thin film formed on the surface of an insulating substrate. A metal oxide thin film is formed on the surface of the insulating substrate vertically as columnar crystal with the diameter of 0.01-10mum. In addition, the average length of a non-fused part between adjacent columnar crystals is set over 30% more than the length of the columnar crystal. For example, a silicon wafer as substrate is heated in oxygen or steam at 1,000 deg.C for 2hr to form an SiO2 insulation film on the surface thereof. Then, an SnO2 sintered body as target is subjected to a sputtering with an evaporating operation to produce a gas sensor.