TREATMENT EQUIPMENT

PURPOSE:To prevent ultraviolet rays radiated on the semiconductor wafer from attenuating, and increase throughput speed, by separating a light source to excite a treating fluid from a treating chamber via a plate transmitting the light, and making a gas which does not absorb the light flow on the light source side. CONSTITUTION:At the bottom of the main body 1 of a treatment equipment, a sample stand 2 which rotates freely in a holizontal plane is installed. Thereon is mounted a semiconductor wafer 3 on the surface of which a photoresist is stuck. The wafer 3 is heated by a heater and, at the same time, a treating fluid 8 composed of mixed gas of oxygen and ozone is supplied from an inlet 7 of treating fluid. A treating chamber B to which the fluid 8 is supplied is separated from a light source chamber A by a transparent plate 6 of quartz and the like. Ultraviolet ray 5 is radiated from a light source 4 such as a mercury lamp 4 in the light source chamber A to excite the fluid 8, and the photoresisit on the wafer 3 is eliminated by oxidizing. In the light source chamber A, nitrogen gas 12 which does not absorb the ultraviolet ray 5 is made to flow.