MANUFACTURE OF THIN FILM SEMICONDUCTOR DEVICE

PURPOSE:To prevent the surface of a thin film semiconductor layer formed with pinholes from being deteriorated in its quality by covering the effective surface of the layer always in contact with a protective electrode layer, and executing an etching step. CONSTITUTION:A substrate 1 is covered with chromium on the whole surface, and selectively etched to form a first electrode layer 2. A thin film semiconductor layer 3 like an NIP a-Si is formed on the whole surface. A protective electrode layer 6 like tin indium oxide is formed on the whole surface. Accordingly, the layer 3 is completely covered with the layer 6. A resist film is formed on the layers 6, 3, the layer 3 is selectively etched and patterned, and the resist film is separated. After an insulating layer of SiO2 is formed on the whole surface, it is selectively etched to form an insulating layer 4 opened at the second electrode connector of the layer 6. A second electrode layer 5 connected to the layer 6 is eventually formed.