JPS636823B

The sample (M), for example an integrated semiconductor circuit element (600), is maintained by a condition setting unit (110) in a first known-temperature (T1) condition and amounts of radiation (P1) from a number of sample surface regions (1 to 18) are detected by a detector (101). The sample (M) is then maintained in a second known-temperature (T2) condition and amounts of radiation (P2) from the surface regions (1 to 18) are detected by the detector (101). The sample (M) is then maintained in a specified measuring condition and amounts of radiation (P0) from the surface regions (1 to 18) are detected by the detector (101). From the amounts of radiation detected (P1, P2, P0) and the known-temperatures (T1, T2) an operations unit (200, 300, 400, 500) determines the unknown temperature (T0) of each of the surface regions (1 to 18) in the specified measuring condition despite the different materials found in the regions. In relation to an integrated semiconductor circuit element (600) the specified measuring condition may be an operation condition of the element arising when current is applied to the element.