SEMICONDUCTOR DEVICE
PURPOSE:To form a resistor in a base region without reducing the effective area of an emitter, and to spread a safety operation region by shaping a base electrode on the surface of a shallow section in the base region and an emitter region in a deep section. CONSTITUTION:A deep base region 2 is form...
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Format: | Patent |
Sprache: | eng |
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Zusammenfassung: | PURPOSE:To form a resistor in a base region without reducing the effective area of an emitter, and to spread a safety operation region by shaping a base electrode on the surface of a shallow section in the base region and an emitter region in a deep section. CONSTITUTION:A deep base region 2 is formed to the main surface of a collector substrate 1 and an emitter region 3 into the base region 2, a shallow base region 10 is shaped so as to be connected to the deep base region 2, and a base electrode 5 is formed onto the region 10. An emitter electrode 6 and a collector electrode 7 are each shaped to the emitter region 3 and the back of the substrate 1. Resistance regions 9 are formed into the shallow base region 10 in a transistor shaped in this manner. |
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