JPS6347152B

PURPOSE:To increase external quantum efficiency, by a method wherein the light emitting layer and the specular surface of a surface luminous-type light emitting diode are provided with curvature and the specular surface is made a concave mirror against radiation light to prevent the light radiated from the luminous layer from propagating over a long range in the luminous layer serving as an absorption layer. CONSTITUTION:A hole 2 with a predetermined diameter is formed at a GaAs substrate 1. The first P type semiconductor layer 3 serving as a carrier enclosure layer, the second P type semiconductor layer 4 as an active layer, and the third N type semiconductor layer 5 are a carrier enclosure layer are grown on the substrate 1. The first semiconductor layer 3 is exposed by removing the substrate 1. An insulating film 6 is spread on the layer 3 to open a window section to obtain a luminous region and an LED chip is made by forming a P type layer 7 and by providing with electrodes 8, 9. In this way, external quantum efficiency is increased while improving luminous efficiency.