MANUFACTURE OF FIELD EFFECT SEMICONDUCTOR DEVICE

PURPOSE:To largely reduce a resistance value and to avoid a parasitic capacity thereby to accelerate the operation of a field effect semiconductor device by depositing a flat film on a gate of a wiring metal, forming a tapered hole, and depositing a low resistance metal in a Y-shape thereon. CONSTITUTION:After a gate metal 4 or a wiring metal is formed on a substrate 1, films 5, 6 which have excellent flatness are deposited, and heat treated at 400 deg.C or lower. After a resist pattern is then formed on the films 5, 6, the pattern is formed with tapers 20, 21 by baking it at 200 deg.C or lower. The film is so etched in a range of 0.5-2.0 of etching speed selection ratio of the films 5, 6 to the resist that the surface of the metal 4 or the wiring metal is exposed. Thereafter, the pattern is removed, a low resistance metal 7 is deposited on the gate or wiring metal 4, the metal 7 is worked, and only the film 5 is then selectively removed.