JPS6346040B

PURPOSE:To produce silicon carbide whisker, in high yield, by heating a specific fine carbon-containing mixture in the presence of elemental Fe, Ni or Co or their compounds. CONSTITUTION:H2 gas introduced through the combustion burner 3 into the furnace 1 is burnt with air sent from the duct 2 to ob...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Hauptverfasser:	MURAKAWA NORIHIRO, MYASHITA AKIRA, MARUYAMA KENSAKU
Format:	Patent
Sprache:	eng
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOIDCHEMISTRY CHEMISTRY COMPOUNDS THEREOF CRYSTAL GROWTH INORGANIC CHEMISTRY METALLURGY NON-METALLIC ELEMENTS PERFORMING OPERATIONS PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH THEIR RELEVANT APPARATUS TRANSPORTING UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	PURPOSE:To produce silicon carbide whisker, in high yield, by heating a specific fine carbon-containing mixture in the presence of elemental Fe, Ni or Co or their compounds. CONSTITUTION:H2 gas introduced through the combustion burner 3 into the furnace 1 is burnt with air sent from the duct 2 to obtain steam-containing hot gas of >=700 deg.C. A mixture of a decomposable silicon compound (e.g. SiCl4) and a carbon compound (e.g. methanol) is introduced through the nozzle 4 into the above hot gas, and the formed aerosol mixture of silicon oxide and carbon is taken out of the system through the duct 5 to obtain a fine carbon-containing mixture having a bulk density of