JPS6339894B

PURPOSE:To minutely process a defect existing in a mask for manufacturing LSI, with reduced damage, by restricting an ion beam by means of an electrostatic lens and by scanning the same by means of a deflecting electrode. CONSTITUTION:An ion beam 25 emitted from an ion gun 8 is restricted by an elec...

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Bibliographische Detailangaben
Hauptverfasser:	PPONGO MIKIO, MYAUCHI TAKEOKI, MITANI MASAO
Format:	Patent
Sprache:	eng
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CINEMATOGRAPHY CLADDING OR PLATING BY SOLDERING OR WELDING CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY MACHINE TOOLS MATERIALS THEREFOR METAL-WORKING NOT OTHERWISE PROVIDED FOR ORIGINALS THEREFOR PERFORMING OPERATIONS PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SEMICONDUCTOR DEVICES SOLDERING OR UNSOLDERING TRANSPORTING WELDING WORKING BY LASER BEAM
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Beschreibung
Zusammenfassung:	PURPOSE:To minutely process a defect existing in a mask for manufacturing LSI, with reduced damage, by restricting an ion beam by means of an electrostatic lens and by scanning the same by means of a deflecting electrode. CONSTITUTION:An ion beam 25 emitted from an ion gun 8 is restricted by an electrostatic lens 9, made to pass through an objective stop 10, deflected by a deflecting electrode 11, converged by an objective lens 13, and applied onto a photomask 14 which is covered with a shield electrode 16 set on an XY table 15. A secondary charged particle springing out of the photomask 14 is caught by a detector 17, the signal thereof is amplified by an amplifier 18, and the surface state of a defective portion of the photomask 14 is displayed on a screen of CRT 19. This surface state can be observed also by an optical microscope 20. The intensity of the beam and the time of its application which are necessary are set in accordance with the kind of a defect, and scanning is made by the ion beam 25 for modification.