JPS6332863B

PURPOSE:To prepare the titled film having excellent photo-conductitity, at high speed, by introducing a monosilane gas into a vacuum chamber, and applying direct electrical field keeping partial pressure of gas, flow of gas, direct electrical power density, and the substrate temperature, at specific levels, thereby generating electrical discharge. CONSTITUTION:An amorphous silicon film is prepared by the direct glow discharge decomposition of monosilane gas which comprises the introduction of the monosilane gas into the vacuum chamber and application of direct electrical field to cause the electrical discharge. In the above process, the amorphous silicon film can be deposited at a rate of >=20Angstrom /sec, by keeping the monosilane gas partial pressure at 0.2-1.0 Torr, the flow of the monosilane gas at 0.01-2.0cc/min per 1cm of the space between the electrodes, the direct electrical power density imposed to the cathode mounted with the substrate at 0.1-1.0W/cm , and the substrate temperature at 250-450 deg.C. The process increases the rate of deposition, suppresses the increase of defects accompanied to the high-speed deposition, and gives an amorphous silicon film having excellent photoconductivity at a reduced production cost.