METHOD FOR FORMING RESIST PATTERN

PURPOSE:To improve the sharpness of a upper layer resist pattern by forming a upper layer resist composed of a silicon contg. material, and also forming a contrast reinforcing layer on the upper layer resist. CONSTITUTION:A 1st resist layer 11 having a nearly flat surface is formed on a substrate 1 having stage difference 2, and a 2nd resist layer 12 composed of a photoresist contg. Si (such as a copolymer shown by the formula) is formed on the layer 11. Next, the contrast reinforcing layer 13 composed of a material contg. a light absorbing agent having a light fading property, is formed on the layer 12. Subsequently, the layers 12 and 13 are patterned by pattern-wisely exposing the layer 13 using, for example, a mercury lamp, followed by developing it. And then, the layer 11 is patterned by aeolotropically dry-etching through the mask of the layer 12. As the layer 12 is used for the mask having the excellent sharpness by the method mentioned above, the pattern with the high accuracy and sharpness, is formed.