PATTERN FORMING METHOD

PURPOSE:To avoid the swelling of a resist and the metal contamination of a semiconductor at the time of developing, by developing a specified resist with a prescribed org. alkaline aqueous solution. CONSTITUTION:A work layer 1B to be finely pattern worked, is formed on the semiconductor substrate plate 1A, and a photoresist 2 composed of a polymer contg. at least one of unit shown by formulas I and II, is formed on the layer 1B. Next, the resist 2 is pattern-wisely exposed, followed by developing the obtd. resist 2 with a tetramethyl ammonium hydroxide aqueous solution. And, then the layer 1B is dry-etched through the mask of the patterned resist 2. In the formula, R1 and R9 are each a lower alkylene group, R2-R4 and R10-R12 are each hydrogen atom. or hydroxyl group, etc., R5-R8 are each a lower alkyl group, R13 is CH2 group, etc., A is phenol group, etc., 0