METHOD FOR FORMING RESIST PATTERN

PURPOSE:To improve the durability against oxygen-plasma of an upper layer resist, and to enable the development of the titled pattern with an org. aqueous alkaline solution by composing the upper layer resist of the polymer contg. a specified silicon. CONSTITUTION:A 1st resist layer 11 having a nearly flat surface is formed on a substrate 1 having difference 2 in level, and a 2nd, resist layer 12 composed of the polymer contg. at least one of unit shown by formulas I and II, is formed on said layer 11. Next, a prescribed pattern is formed by pattern-wisely exposing the layer 12, followed by developing it, and the resist pattern 13 is formed by aeolotropically dry-etching the obtd. pattern through the mask of the layer 11 in an oxygen plasma. In the formulas, R1 and R9 are each a lower alkylene group, R2-R4 and R10-R12 are each hydrogen atom. or hydroxyl group, etc., R5-R8 are each a lower alkyl group, R13 is CH2 group, etc., A is phenyl group, etc., 0