FORMATION OF INTERLAYER INSULATING FILM FOR MULTILAYER INTERCONNECTION

PURPOSE:To permit the stabilization of an interlayer insulating film by low- temperature treatment without a high-temperature baking by a method wherein a thin film is formed using Si-containing organic compound solution by a spin coating method and ultraviolet light of a wavelength of 250 nm or less is irradiated on this thin film under the existence of oxygen. CONSTITUTION:An Si-containing organic compound is used as a coating insulating film and the coating film is irradiated with ultraviolet rays of a wavelength of 250 nm or less. That is, after a first wiring layer 12 is formed on a substrate 11, for example, solution obtainable by dissolving PLOS (polyladder organosiloxane) in chlorobenzene is spin coated and a thin film 13 is formed. Then, after a baking is performed at a constant temperature, ultraviolet light with a low-pressure mercury-arc lamp as its light source (the intensity of the light source is 5 mw/cm in wavelength 250 nm,) is irradiated and the PLOS is oxidized and stabilized. Then, contact holes between the first wiring layer and a second wiring layer are formed, a second wiring metal 14 is deposited, the prescribed microscopic processing is performed and the second wiring layer is formed.