MANUFACTURE OF AMORPHOUS SEMICONDUCTOR PHOTOSENSOR

PURPOSE:To avoid variation of an open voltage by a method wherein, after an amorphous semiconductor film is formed on a lower electrode, the drawn-out electrode plane of the lower electrode is covered with an acid-proof metal film and then the lower electrode is etched and the contact electrode part of an upper electrode is connected to the drawn-out electrode part of the lower electrode through the acid-proof metal film. CONSTITUTION:After an amorphous semiconductor film 13 is formed on a lower electrode 12, the drawn-out electrode plane 12a of the lower electrode 12 is covered with an acid-proof metal film 16 and then an insulating substrate 11 is dipped in acid solution to etch the lower electrode 12 through the amorphous semiconductor film 13. After that, an upper electrode 14 is formed on the amorphous semiconductor film 13 and the contact electrode part 14a of the upper electrode 14 is connected to the drawn-out electrode part 12a of the lower electrode 12 through the acid-proof metal film 16. Therefore, the lower electrode 12 under the pinholes of the amorphous semiconductor film 13 can be etched almost over the whole surface of the amorphous semiconductor film 13. with this constitution, the variation of an open voltage can be avoided.