MANUFACTURE OF SEMICONDUCTOR DEVICE

PURPOSE:To prevent reaction between an insulating film and a high-melting metal or a silicide of a high-melting metal constituting an interconnection, by providing a film of silicon nitride or TiN not reacting with the high-melting metal or the silicide of the high-melting metal so as to surround the interconnection. CONSTITUTION:After a first electrode interconnection layer 16, a gate electrode 15 and a second insulatlng film 17 are formed, a second interconnection layer 18 of a high-melting metal or a silicide of a high-melting metal is formed. A silicon nitride film 21 is provided as a barrier film on the insulating flim 17. A silicon nitride film 22 is provided as a barrier film over the interconnection 18. and a third insulating film 19 is formed thereon. According to such construction, any reaction is hardly caused by heat treatments and the low resistance that the high-melting metal of the silicide of the high-melting metal properly has is kept. Thus, the reaction of the interconnection 18 with the insulation films 17 and 19 can be prevented.