COMPOSITION FOR POLISHING WAFER

PURPOSE:To prevent the metal atoms from being adsorbed onto the surface of a wafer by preparing the high polymeric compounds containing water-soluble chelating agent or the high polymeric ions having a molecular weight over a specific value and adjusting the pH value over a specific value by adding...

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Bibliographische Detailangaben
Hauptverfasser:	ARITAKE YASUO, SASAKI SHIGEO
Format:	Patent
Sprache:	eng
Schlagworte:	ADHESIVES BASIC ELECTRIC ELEMENTS CHEMISTRY DRESSING OR CONDITIONING OF ABRADING SURFACES DYES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS GRINDING MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE METALLURGY MISCELLANEOUS APPLICATIONS OF MATERIALS MISCELLANEOUS COMPOSITIONS NATURAL RESINS PAINTS PERFORMING OPERATIONS POLISHES POLISHING SEMICONDUCTOR DEVICES TRANSPORTING
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Beschreibung
Zusammenfassung:	PURPOSE:To prevent the metal atoms from being adsorbed onto the surface of a wafer by preparing the high polymeric compounds containing water-soluble chelating agent or the high polymeric ions having a molecular weight over a specific value and adjusting the pH value over a specific value by adding the alkaline compounds. CONSTITUTION:A composition for polishing wafer is prepared from water, particulate amorphous silica, and water-soluble chelating agent or the high polymeric ions having a molecular weight of 5,000 or more, and the pH of the composition is adjusted to at least 9 by the alkaline compounds. Since the composition contains chelating agents or high polymeric ions, and these substances and the metal atoms contained in the polishing agent composition from a strong composite body together with water particles, the free metal atoms which exist in the polishing agent composition can be reduced exceedingly. When the surface of the wafer is polished by using the polishing composition, the metal atoms in the polishing agent are hardly adsorbed onto the surface of the wafer, and the thermal diffusion and doping can be prevented. Therefore, the electric characteristics of the wafer can be made uniform microscopically.