SPUTTERING DEVICE OF PLANAR MAGNETRON SYSTEM

PURPOSE:To enlarge the effective treating width of a material to be treated and to prolong the service life of a target by arranging an electrode for forming a tunneled magnetic field distribution on the region of the planar target at a specified position. CONSTITUTION:The sputtering device is provi...

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Bibliographische Detailangaben
Hauptverfasser:	KATSURA HIROYUKI, TOKAI MASAYA
Format:	Patent
Sprache:	eng
Schlagworte:	CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	PURPOSE:To enlarge the effective treating width of a material to be treated and to prolong the service life of a target by arranging an electrode for forming a tunneled magnetic field distribution on the region of the planar target at a specified position. CONSTITUTION:The sputtering device is provided with a roll anode 6 arranged in a vacuum vessel 9 and the electrodes 14, 17, and 18 for forming the tunneled magnetic field distribution 5 on the region of the planar target 1. The planar target 1 is set so as to cover the rectangular annular electrodes placed in the recess on the end face side of a cathode 7 opposed to the band material 11 to be treated wound on the anode 6. In addition, a plurality of the electrodes 14, 17, and 18 are provided, and arranged in a line or staggered in the traveling direction of the material 11.