CHARGED PARTICLE BEAM LITHOGRAPHY

PURPOSE:To improve the accuracy of directly written patterns extending over in X and Y directions while correcting any shifting errors of stage and slip of beams etc., by means of providing fields having respectively overlapping framed regions before writing patterns. CONSTITUTION:Before writing rec...

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Bibliographische Detailangaben
Hauptverfasser: YUASA TETSUO, KOSAKA YASUYUKI
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:PURPOSE:To improve the accuracy of directly written patterns extending over in X and Y directions while correcting any shifting errors of stage and slip of beams etc., by means of providing fields having respectively overlapping framed regions before writing patterns. CONSTITUTION:Before writing rectangular patterns, when the data inside the pattern from a magnetic disc 13 extend over multiple fields, the patterns are divided into two regions, i.e. the framed regions and the residual regions excluding the framed regions by a controller 7. The position, type of fields containing respectively divided patterns, initial positions and respective dimensions in X and Y directions are stored either in built-in memory or in an outer memory. When the divided and stored patterns are read out and fed to deflectors 5 and blanking deflectors 8 to be written, the electron beams from an electron gun 1 are focussed by focussing lenses 2, 3 to be directly written by the deflectors 5 on the specified position so that the accuracy of directly written patterns extending over in X and Y directions may be improved.