MANUFACTURE OF THIN FILM OF SEMICONDUCTOR ELEMENT

PURPOSE:To form a chip into a thin type at a good yield by a method wherein after the splash at the time of the formation of an element is removed, the chip is fixed on a polishing substrate at the element forming surface, the chip rear surface is polished in the desired thickness and after a light-introducing window material is adhered on the surface, the substrate is detached. CONSTITUTION:A ceramic crucible is used at the time of the formation of an element, a W wool is put on an Au source to evaporate Au on a wafer provided with InSb-PDA (photo diode row) and a chip 12 having no splash is prepared. The element forming surface of the chip 12 is fixed on a polishing substrate 11 with a wax 13. The chip rear surface is polished to the prescribed thickness and etched. Then, a light-introducing window material 17 is fixed on the etched surface with an ultraviolet curing agent 18. Then, when the wax 13 is dissolved with trichlene and the substrate 11 is removed, the chip 12 can be formed into a thin type without being subjected to any damage.