HIGH-MELTING POINT METAL SILICIDE TARGET AND ITS PRODUCTION

PURPOSE:To produce the title target of the metal silicide having a specified composition by mixing a high-m.p. metal and Si, melting the mixture to alloy the materials, crushing the alloy, removing the excess Si, and sintering the crushed alloy at the time of producing a sputtering target with the s...

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Bibliographische Detailangaben
Hauptverfasser:	SHIMOTORI KAZUMI, ISHIGAMI TAKASHI, KAWAI MITSUO
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	PURPOSE:To produce the title target of the metal silicide having a specified composition by mixing a high-m.p. metal and Si, melting the mixture to alloy the materials, crushing the alloy, removing the excess Si, and sintering the crushed alloy at the time of producing a sputtering target with the silicide of a specified high-m.p. metal as the raw material. CONSTITUTION:The high-purity silicide of a high-m.p. metal M such as Ti, Zr, Ta, Mo and W having the stoichiometrical composition of MSin [(n) is the number of mols.] and contg. n'>2) is obtained. The contaminants such as Fe coming from a crusher during crushing are removed by pickling, etc., the crushed alloy is then molded and sintered in a vacuum, and the sputtering target of the high- purity metal silicide having the prescribed composition of MSin' is produced.