MANUFACTURE OF SEMICONDUCTOR DEVICE

PURPOSE:To prevent a disconnection, a constriction or the like of a wiring part at a connecting part by a method wherein a conductive part for contact use is first formed selectively on an active region in order to connect the active region to an upper-layer wiring part to be formed later and, after that, an interlayer insulating film is formed. CONSTITUTION:An aluminum film 10 at a part where photosensitive coated films 9 are not formed is removed by an anisotropic etching method or the like, and contact aluminum parts 10 are formed. After that, a first insulating film 6 is formed in such a way that its height is about 1.5 times as high as the contact aluminum parts 10; the upper face of the first interlayer insulating film 6 is etched by an etching-back method or the like until the tip part of the contact aluminum parts 10 is exposed. Then, an aluminum film is formed on the upper part of the first interlayer insulating film 6 and the contact aluminum parts 10 by a sputtering method or the like; after the aluminum film has been patterned, an aluminum wiring part 5 is formed. Furthermore, a second interlayer insulating film 8 is formed on the aluminum wiring part 5. By this setup, source-drain regions 4 can be connected electrically to the aluminum wiring part 5 on it surely.