THIN FILM TREATING DEVICE
PURPOSE:To prevent the damage of the electrodes due to corrosion and enable film formation or etching with high reliability in a high yeild, by specifying the material of electrodes acting as the cathode and anode for causing electric discharge in a vacuum vessel to which reactive gases are fed. CON...
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creator | SATO MICHIO TAKEUCHI HIROSHI KAGAMI HIDEYO |
description | PURPOSE:To prevent the damage of the electrodes due to corrosion and enable film formation or etching with high reliability in a high yeild, by specifying the material of electrodes acting as the cathode and anode for causing electric discharge in a vacuum vessel to which reactive gases are fed. CONSTITUTION:A pair of parallel flat electrodes 3, 4 are arranged in the vacuum vessel 1 of a plasma CVD device in which a film is formed on a flat substrate. The electrode 3 is connected to a high frequency power source 5 and functions as the cathode. The electrode 4 is usually earthed and functions as the anode. When the electrodes 3, 4 are made of an alloy consisting of |
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CONSTITUTION:A pair of parallel flat electrodes 3, 4 are arranged in the vacuum vessel 1 of a plasma CVD device in which a film is formed on a flat substrate. The electrode 3 is connected to a high frequency power source 5 and functions as the cathode. The electrode 4 is usually earthed and functions as the anode. When the electrodes 3, 4 are made of an alloy consisting of <=20wt.% Cr and the balance Ni, the damage of the electrodes 3, 4 due to corrosion by corrosive gases can be prevented and a film contg. no foreign matter is obtd. In case of etching, the formation of a defective pattern can be prevented.</description><language>eng</language><subject>CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25 ; NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><creationdate>1988</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19880909&DB=EPODOC&CC=JP&NR=S63216975A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25543,76293</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19880909&DB=EPODOC&CC=JP&NR=S63216975A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>SATO MICHIO</creatorcontrib><creatorcontrib>TAKEUCHI HIROSHI</creatorcontrib><creatorcontrib>KAGAMI HIDEYO</creatorcontrib><title>THIN FILM TREATING DEVICE</title><description>PURPOSE:To prevent the damage of the electrodes due to corrosion and enable film formation or etching with high reliability in a high yeild, by specifying the material of electrodes acting as the cathode and anode for causing electric discharge in a vacuum vessel to which reactive gases are fed. CONSTITUTION:A pair of parallel flat electrodes 3, 4 are arranged in the vacuum vessel 1 of a plasma CVD device in which a film is formed on a flat substrate. The electrode 3 is connected to a high frequency power source 5 and functions as the cathode. The electrode 4 is usually earthed and functions as the anode. When the electrodes 3, 4 are made of an alloy consisting of <=20wt.% Cr and the balance Ni, the damage of the electrodes 3, 4 due to corrosion by corrosive gases can be prevented and a film contg. no foreign matter is obtd. In case of etching, the formation of a defective pattern can be prevented.</description><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25</subject><subject>NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>1988</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZJAM8fD0U3Dz9PFVCAlydQzx9HNXcHEN83R25WFgTUvMKU7lhdLcDIpuriHOHrqpBfnxqcUFicmpeakl8V4BwWbGRoZmluamjsbEqAEAC6ggLw</recordid><startdate>19880909</startdate><enddate>19880909</enddate><creator>SATO MICHIO</creator><creator>TAKEUCHI HIROSHI</creator><creator>KAGAMI HIDEYO</creator><scope>EVB</scope></search><sort><creationdate>19880909</creationdate><title>THIN FILM TREATING DEVICE</title><author>SATO MICHIO ; TAKEUCHI HIROSHI ; KAGAMI HIDEYO</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JPS63216975A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>1988</creationdate><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25</topic><topic>NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><toplevel>online_resources</toplevel><creatorcontrib>SATO MICHIO</creatorcontrib><creatorcontrib>TAKEUCHI HIROSHI</creatorcontrib><creatorcontrib>KAGAMI HIDEYO</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>SATO MICHIO</au><au>TAKEUCHI HIROSHI</au><au>KAGAMI HIDEYO</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>THIN FILM TREATING DEVICE</title><date>1988-09-09</date><risdate>1988</risdate><abstract>PURPOSE:To prevent the damage of the electrodes due to corrosion and enable film formation or etching with high reliability in a high yeild, by specifying the material of electrodes acting as the cathode and anode for causing electric discharge in a vacuum vessel to which reactive gases are fed. CONSTITUTION:A pair of parallel flat electrodes 3, 4 are arranged in the vacuum vessel 1 of a plasma CVD device in which a film is formed on a flat substrate. The electrode 3 is connected to a high frequency power source 5 and functions as the cathode. The electrode 4 is usually earthed and functions as the anode. When the electrodes 3, 4 are made of an alloy consisting of <=20wt.% Cr and the balance Ni, the damage of the electrodes 3, 4 due to corrosion by corrosive gases can be prevented and a film contg. no foreign matter is obtd. In case of etching, the formation of a defective pattern can be prevented.</abstract><oa>free_for_read</oa></addata></record> |
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subjects | CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25 NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
title | THIN FILM TREATING DEVICE |
url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-24T13%3A03%3A46IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=SATO%20MICHIO&rft.date=1988-09-09&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EJPS63216975A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |