THIN FILM TREATING DEVICE

PURPOSE:To prevent the damage of the electrodes due to corrosion and enable film formation or etching with high reliability in a high yeild, by specifying the material of electrodes acting as the cathode and anode for causing electric discharge in a vacuum vessel to which reactive gases are fed. CON...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: SATO MICHIO, TAKEUCHI HIROSHI, KAGAMI HIDEYO
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:PURPOSE:To prevent the damage of the electrodes due to corrosion and enable film formation or etching with high reliability in a high yeild, by specifying the material of electrodes acting as the cathode and anode for causing electric discharge in a vacuum vessel to which reactive gases are fed. CONSTITUTION:A pair of parallel flat electrodes 3, 4 are arranged in the vacuum vessel 1 of a plasma CVD device in which a film is formed on a flat substrate. The electrode 3 is connected to a high frequency power source 5 and functions as the cathode. The electrode 4 is usually earthed and functions as the anode. When the electrodes 3, 4 are made of an alloy consisting of