PRODUCTION OF COMPOUND SEMICONDUCTOR

PURPOSE:To produce a compound semiconductor having reduced carbon concentration, by growing crystal in an inert gas blended with a reducing gas. CONSTITUTION:An inert gas such as Ar or N2 blended with a reducing gas such as H2, NH4 or arsine in a ratio of

Gespeichert in:

Bibliographische Detailangaben
Hauptverfasser:	MASUKATA YOSHIMASA, YOSHIDA KENICHI, SHIROKAWA JUNJIRO
Format:	Patent
Sprache:	eng
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMISTRY CRYSTAL GROWTH METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	PURPOSE:To produce a compound semiconductor having reduced carbon concentration, by growing crystal in an inert gas blended with a reducing gas. CONSTITUTION:An inert gas such as Ar or N2 blended with a reducing gas such as H2, NH4 or arsine in a ratio of