BIPOLAR TRANSISTOR EMPLOYING CMOS TECHNOLOGY AND MANUFACTURE OF THE SAME

BIPOLAR TRANSISTOR EMPLOYING CMOS TECHNOLOGY AND MANUFACTURE OF THE SAME

Disclosed is a bipolar transistor and a method of fabrication thereof compatible with MOSFET devices. A transistor intrinsic base region (54) is formed in the face of a semiconductor well (22), and covered with a gate oxide (44). The gate oxide (44) is opened, and doped polysilicon is deposited ther...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: RAJIBU AARU SHIYA, DEBITSUDO SUPURATSUTO
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:Disclosed is a bipolar transistor and a method of fabrication thereof compatible with MOSFET devices. A transistor intrinsic base region (54) is formed in the face of a semiconductor well (22), and covered with a gate oxide (44). The gate oxide (44) is opened, and doped polysilicon is deposited thereover to form a polyemitter structure (68) in contact with the base region (54). Sidewall oxide (82, 84) is formed on the polyemitter structure (60). A collector region (90) and an extrinsic base region (100) are formed in the semiconductor well (22) and self aligned with respect to opposing side edges of the polyemitter sidewall oxide (82, 84).